Managing method of building material and wireless chip applied to the method

ABSTRACT

A lot of buildings have been built while it is concerned that a building material is used fraudulently. Therefore, the present invention provides a managing method of the material and a system thereof. The present invention provides a managing method including a step of attaching a sheet including a plurality of memories to each surface of a plurality of materials, a step of dividing the plurality of materials with the sheet in accordance with data in the memory, a step of constructing a building by using the divided material in accordance with the data in the memory, and a step of checking the data on the constructed building, which is stored in the plurality of memories.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a managing method in a materialdividing process and a manufacturing process and a managing method formanaging and preventing a building material from being used fraudulentlyand a wireless chip applied to these methods.

2. Description of the Related Art

Under the condition that many buildings have been built, it is concernedthat building materials are used fraudulently. For example, it is aproblem that although advertising that a particular wood material isused, a building is constructed without using the wood material. This isbecause it is difficult that a client or a builder checks whether a woodmaterial is authentic or not if the wood material is processed by abuilder's office or the like.

In addition, there is a building method of specifying a wood material, astone material, and many other materials in order to coordinate with apersonal preference of a client. In the case where thus buying manymaterials from different suppliers is considered, it is concerned thatmanagement becomes complicated.

Further, in the building industry, a concrete quality managing systemhas been suggested, in which an RFID tag is implanted in concrete usedas a building material (see Patent Document 1).

[Patent Document 1]

Japanese Patent Laid-Open No. 2004-109002

In the Patent Document 1, it is described that an RFID is implanted inone piece of concrete. However, it becomes difficult to process thepiece of concrete thereafter. Further, a system for managing buildingmaterials or preventing a fraud is not constructed.

SUMMARY OF THE INVENTION

Thus, the present invention provides a managing method of generalresources such as a material and a system thereof.

In view of the aforementioned problems, in the present invention, a chipis attached to a certain material before the material is divided. Thematerial can be managed by writing data on the material to the chip andreading the written data. The chip can be attached in a sheet state, andthe attached state of the chip can be maintained even after thedivision. As such a material, a building material is cited. By abuilding constructed by using the building material, a manager or thelike can sequentially obtain data on the building, manage the materials,and prevent the materials from being used fraudulently.

Hereinafter, the present invention is described specifically.

A mode of the present invention is a building material managing methodincluding a step of attaching a sheet including a plurality of memoriesto each surface of a plurality of materials, a step of dividing each ofthe plurality of materials with each sheet in accordance with data inthe memories, a step of constructing a building by using the dividedmaterials in accordance with the data in the memories, and a step ofchecking the data on the building, which is stored in the plurality ofmemories.

Another mode of the present invention is a building material managingmethod including a step of attaching a sheet including a plurality ofwrite-once memories in which data on a material are stored to eachsurface of a plurality of the materials, a step of dividing each of theplurality of materials with each sheet and writing data on the divisionto the memories, a step of constructing a building by using the dividedmaterials and writing data on the construction to the memories, and astep of checking the data on the building, which is stored in theplurality of memories.

Another mode of the present invention is a building material managingmethod including a step of attaching a sheet including a plurality ofmemories in which data on a material are stored and a log is set so asnot to be written to each surface of a plurality of the materials, astep of dividing each of the plurality of materials with each sheet inaccordance with the data in the memories, a step of constructing abuilding by using the divided materials in accordance with the data inthe memories, and a step of checking the data on the building, which isstored in the memories and canceling the log of the memories so as towrite the data to the memories. The memories are write-once and they areimpossible to erase data thereof. Therefore, managed data are preventedfrom being falsified.

Another mode of the present invention is a building material managingmethod including a step of attaching a sheet including a plurality ofmemories in which data on a material are stored to each surface of aplurality of the materials by a first processor, a step of reading thedata in the memories and dividing each of the plurality of materialswith each sheet in accordance with the data by a second processor, astep of reading the data in the memories and constructing a building byusing the divided materials in accordance with the data by a thirdprocessor, and a step of checking the data of the building, which isstored in the memories, and providing the data to a client by a fourthprocessor.

Another mode of the present invention is a building material managingmethod including a step of attaching a sheet including a plurality ofwrite-once memories in which data on a material are stored to eachsurface of a plurality of the materials by a first processor, a step ofreading the data in the memories, dividing each of the plurality ofmaterials with each sheet, and storing data on the division by a secondprocessor, a step of reading the data in the memories, constructing abuilding by using the divided materials, and storing data on theconstruction by a third processor, and a step of checking the data ofthe building, which is stored in the memories, and providing the data toa client by a fourth processor.

Another mode of the present invention is a building material managingmethod including a step of attaching a sheet including a plurality ofmemories in which data on a material are stored and a log is set so asnot to be written to each surface of a plurality of the materials by afirst processor, a step of dividing each of the plurality of materialswith each sheet in accordance with read data in the memories by a secondprocessor, a step of constructing a building by using the dividedmaterials in accordance with read data in the memories by a thirdprocessor, and a step of checking the data of the building, which isstored in the memories, canceling the log of the memories so as to writethe data and providing the data to a client by a fourth processor.

The present invention provides a wireless chip applied to the method.

By the present invention, a material can be managed; therefore, a use ofa fraudulent material, which means fabrication or falsification, can beprevented.

Further by the present invention, even in the case of a building methodvia a plurality of processors, a material can be easily managed amongthe processors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a view showing a managing method of the presentinvention.

FIGS. 2A to 2D are a view showing a building process to which a managingmethod of the present invention is applied.

FIG. 3 is a flowchart showing a managing method of the presentinvention.

FIG. 4 is a view showing a system for carrying out a managing method ofthe present invention.

FIG. 5 is a view showing a system for carrying out a managing method ofthe present invention.

FIG. 6 is a cross sectional view of an attached chip of the presentinvention.

FIG. 7 is a view showing a structure of a chip of the present invention.

FIG. 8 is a view showing a memory device of the present invention.

FIGS. 9A and 9B are circuit diagrams showing a memory element of thepresent invention.

FIG. 10 is a circuit diagram showing an operation of a memory device ofthe present invention.

FIGS. 11A and 11B are cross sectional views showing a memory device ofthe present invention.

DETAILED DESCRIPTION OF THE INVENTION

Although the present invention will be fully described by way ofembodiment modes with reference to the accompanying drawings, it is tobe understood that various changes and modifications will be apparent tothose skilled in the art. Therefore, unless such changes andmodifications depart from the scope of the present invention, theyshould be construed as being included therein. Note that identicalportions in embodiment modes are denoted by the same reference numeralsand detailed descriptions thereof are omitted.

Embodiment Mode 1

In this embodiment mode, description is made on a material managingmethod in which a sheet including a wireless chip provided with a memorydevice is attached to the material.

FIG. 1A shows a sheet 101 provided with a plurality of wireless chips100 arranging adjacent to one another. Each wireless chip 100 canreceive power or a signal by wireless communication. A large number ofwireless chips 100 of the present invention can be obtained from oneflexible substrate. Therefore, a flexible substrate before being dividedso as to obtain a large number of wireless chips can be used as thesheet 101. Such a wireless chip of the present invention is sufficientlyflexible as compared to a chip formed of a silicon wafer because thewireless chip of the present invention can be formed by using a flexiblesubstrate. Accordingly, such a flexible wireless chip can also beattached to a surface other than a flat surface. Although the sheet 101has many wireless chips 100, there is no limitation in the number, thedistance among them, the size, or the like. That is, the number, thedistance among them, the size, or the like of the wireless chip 100 inthe sheet 101 can be determined in accordance with a shape of a materialto be attached or a shape of a flexible substrate after being divided.

FIG. 1B shows a first material A and a second material B as a pluralityof materials. The sheet 101 including wireless chips is attached to onesurface of the first material A. In the same manner, the sheet 101including wireless chips is attached to one surface of the secondmaterial B. Although in this embodiment mode, the sheet 101 is attachedto one surface of each material; it may be attached to all surfaces ofeach material. It is to be noted that the sheet 101 is attached to allof the materials after being divided.

The wireless chip 100 of the present invention includes a memory device102. The memory device 102 can write to/read from a memory area bywireless communication.

Table 1 shows a function and a requirement for operation of the memorydevice 102. TABLE 1 Function provided with a memory device Requirementfor operation of a memory Switch address (s) Operates as a switch forreading ID (A) ID (A) ID(A) can be read when a switch Global ID (a)Local ID (a) address (s) is turned on ID (B) Reading can be carried outas required Global ID (b) Local ID (b) Write-once memory Reading/writingcan be conducted as required

The memory device 102 includes a memory area constituting identificationdata ID (A) and ID (B). The identification data ID (A) and ID (B)correspond to initial data, and may be written to the memory device 102without wireless communication. The identification data ID (A) and ID(B) can be divided into a global ID (a)/(b) for identifying that it isincluded in the memory device 102 in the same sheet 101 and a local ID(a)/(b) for distinguishing from the other memory devices in the samesheet 101, respectively. A global ID is an ID for identifying asubstance. The same global ID is provided to each wireless chip 100 inthe sheet 101 attached to the substance. On the other hand, a local IDis an ID for distinguishing the wireless chips 100 constituting thesheet 101 attached to the same substance.

Further, the memory device 102 includes a switch address (s) forcontrolling reading of the identification data ID (A). The switchaddress (s) functions and operates as a switch for reading the ID (A).Thus, the switch address (s) is stored in the memory area, andcontrolled to be turned on/off by a control circuit. Therefore, theswitch address (s) is preferably formed of a write-once memory (arecordable memory to which data can be only written and in which datacannot be erased). The switch address (s) is initially in an off state.Note that when writing in the switch address (s) is carried out and theswitch address (s) is turned on, a signal constituting a password isinputted to each wireless chip 101. In this manner, the set log can becancelled.

On the other hand, the identification data ID (B) are set so as to beread as required. Thus, by differentiating a requirement for access toeach identification data, fabrication can be prevented.

Note that in a material managing process or the like, when each memorydevice 102 is not required to be distinguished, the identification dataID (B) is not required to be provided.

Further, the memory device 102 includes another write-once memoryadditionally. Data can be read from/write to the write-once memory asrequired. That is, data on a material can be written to and then readfrom the write-once memory. Accordingly, the read data can be providedto a client and the like.

Each of the first material A and the second material B which areattached to the sheet 101 including the memory device 102 is divided. Inthis embodiment mode, description is made on a case where the materialsare divided into two parts, that is, the first material A is dividedinto A1 and A2, and the second material B is divided into B1 and B2. Atthis time, the wireless chips 100 included in the sheet 101 are alsodivided; thereby generating a damaged area 107. However, a plurality ofthe wireless chips 100 are formed in the sheet 101; therefore, it doesnot matter if some of them are damaged. This is because the undamagedwireless chips 100 can identify each of the first material A and thesecond material B.

Thereafter, a product is manufactured by combining the dividedmaterials. In this embodiment mode, a product C1 combining A1 and B1,and a product C2 combining A2 and B2 are manufactured.

The local ID (a) and ID (b) in the memory device 102 are different fromeach other, thereby enabling to distinguish A1 from A2. Further, it canbe identified that A1 and A2 are processed from the same material by theglobal ID (a) and ID (b) which are stored in the memory device 102. Inthe same manner, B1 and B2 can be distinguished and identified by thelocal IDs and the global IDs. Accordingly, each of the product C1(=A1+B1) and the product C2 (=A2+B2) can be identified by the global IDsand the local IDs that are stored in each memory device 102. After that,data on the process of the products C1 and C2 can also be written to thememory device 102. Accordingly, the data on the process other than thedata on the material can be read and provided. The data on the processinclude a processing method, a process size, and the like.

Thus processed product remains being attached to the memory device 102;therefore, data can be read from the memory device 102.

In the case where a building is constructed by using the material towhich the memory device 102 is attached, data from the memory device 102can be obtained even in process of the construction; therefore, thematerial is prevented from being used fraudulently.

Thus, by the present invention, quality of a material constituting abuilding can be managed, and a fraudulent material can be prevented frombeing used.

Further, by the present invention, even in the case of a building methodvia a plurality of processors, a material can be easily managed amongprocessors.

Although in this embodiment mode, a mode in which the wireless chip 100s are attached to a surface of a material, a mode in which the wirelesschips 100 are implanted in a material itself may also be employed. Evenin the case where a material in which the wireless chips 100 areimplanted is processed, the data on the material and the data on theprocess can be written to the memory device 102 as aforementioned bywireless communication.

Note that although in this embodiment mode, description is made on thecase of using a building material as a material; the present inventionis not limited to this. A system of the present invention can be appliedto any business mode as far as it generates such an effect asaforementioned. For example, in the plant of food products made from aplurality of ingredients or in the plant of cars formed of a pluralityof parts, the present invention can also be applied.

Embodiment Mode 2

In this embodiment mode, description is made on the managing methodusing a material to which a sheet including a plurality of memorydevices is attached.

FIG. 2 shows a building process in which a building is constructed byusing a wood material around which the sheet 101 is wrapped.

First, a plurality of divided wood materials (1) to (n) are prepared asshown in FIG. 2A. The divided wood materials (1) to (n) can be differentfrom one another, and selected by a client. These divided wood materialsmay be bought from one or more suppliers. Further, the present inventioncan be applied to a wall material and a concrete material as well as awood material.

Subsequently, as shown in FIG. 2B, the sheet 101 is wrapped around so asto be attached to a part of each of the plurality of wood materials (1)to (n). Since the wood material is often divided in a longitudinaldirection, the sheet 101 is wrapped around the wood material along adirection perpendicular to the longitudinal direction. The presentinvention is not limited to the attachment mode of the sheet 101, andthe attachment mode can be determined in accordance with a subsequentmode of dividing wood or the like. That is to say, the sheet 101 isattached to all pieces of the divided wood material even when the woodmaterial is divided.

In the memory device 102 of the sheet 101, initial data on the woodmaterial (a logging area, a divided shape, a place in which the wood isused within a building, and the like) are stored. The initial data canbe stored on the memory device 102 by using a reader/writer device. Suchinitial data can be written to the area having a recordable memorystructure shown in Table 1.

Subsequently, each wood material is cut into a predetermined shape to beused as a building material. The memory device 102 is attached to thebuilding material even after the division; therefore, the data can beread and other data can be written additionally. The other data includedata on divided time, a name of a dividing processor, and the like.Although in this embodiment mode, a mode in which each wood material iscut into a rectangle as a building material used for a pillar is shown;the present invention can be applied to a material for a wall or a roofas well as a pillar.

Accordingly, a building is completed by using these materials as shownin FIG. 2D. Thus, each material constituting the building can includethe memory device 102, and data on the material can be obtained afterthe completion, that is, completion of construction. Therefore, anillegal material, an illegal use, or the like can be found out. Forexample, it can be found out that a less expensive material than a setmaterial is used.

Needless to say, even in the middle of a process, data can be obtainedfrom the memory device and written to the memory device. The data to bewritten include process data on process time, a processor, and the like.In this manner, the process data are regularly obtained from the memorydevice in the middle of the process; therefore, an illegal material, anillegal use, or the like can be found out early.

FIG. 3 shows data exchanges shown in FIGS. 2A to 2D by using aflowchart, and a state of the memory device 102 included in a wirelesschip.

First, there is a step (S01) of attaching the sheet 101 to a woodmaterial. Subsequently, there is a step (S02) of writing initial data toa memory in the wireless chips 100 included in the sheet 101. Here, theinitial data are written to each memory in all of the wireless chips100. This is because in a subsequent dividing process, an arbitrarywireless chip may be damaged. Either the step S01 or the step S02 may becarried out in first.

Although the steps (S01) and (S02) are carried out by the sameprocessor, each of them may also be carried out by a differentprocessor. For example, the initial data may be written to the sheet 101by a first processor, and the sheet 101 may be attached to the woodmaterial by a second processor who receives the sheet 101 from the firstprocessor. In such a case, the first processor and the second processorare required to make a contract to the effect.

Next, there is a step (S03) of dividing the material. At this time, itis concerned that any of the wireless chips 100 included in the sheet101 is damaged. However, in the present invention, a plurality of thewireless chips 100 are provided in the sheet 101 and the initial dataare written to each memory included in all of the wireless chips 100;therefore, it does not matter that any of the wireless chips 100 isdamaged. Thereafter, there is a step (S04) of writing division data to amemory in all of the undamaged wireless chips 100. Either the step S03or the step S04 may be carried out in first.

Although the steps S03 and S04 can be carried out by the same processor,each of them may also be carried out by a different processor. A modebetween steps S01 and S02 can be referred to for such a mode. Further, aprocessor carrying out the steps S01 and S02 and a processor carryingout the steps S03 and S04 may be the same or different.

Subsequently, there is a step (S05) of constructing a building, andthen, there is a step (S06) of writing process data to a memory includedin all of the undamaged wireless chips 100. Either the step S05 or thestep S06 may be carried out in first.

Although the steps S05 and S06 are carried out by the same processor,each of them may also be carried out by a different processor. A modebetween steps S01 and S02 can be referred to for such a mode. Further, aprocessor carrying out the steps S01 and S02, a processor carrying outthe steps S03 and S04, and a processor carrying out the steps S05 andS06 may be the same or different.

Finally, there is a step (S07) of checking the written data. By holdinga reader/writer device 210 over a pillar or the like of a building,initial data, division data, and process data of a building material canbe obtained by wireless communication. The obtained data can be storedin a data processing device 211 with or without wires through thereader/writer device 210. Thus, the data processing device 211 in whichdata are stored functions as a server.

The stored data can be provided to a client, a material supplier, adividing processor, a process manufacturer, and the like. Accordingly,an illegal material, an illegal use, or the like can be found out. Notethat these data can be read in the middle of the process asaforementioned.

FIG. 4 shows a communication system among a processor (D), that is, amanager, a builder, and a client. The data processing device 211 whichfunctions as a server possessed by the manager includes at least acentral processing unit (CPU) 212, a transmitting/receiving portion 213provided with a function of transmitting/receiving data, a database 214in which data are stored, and a R/W interface portion 215 forcommunicating with the reader/writer device 210. The database 214 isprovided with a memory area. These functions in the data processingdevice 211 are connected through a bus.

A data processing device 221 possessed by the builder includes at leasta central processing unit 222, a transmitting/receiving portion 223provided with a function of transmitting/receiving data, and a database224. The database 224 is provided with a memory area. In addition, thedata processing device 221 may also include an R/W interface portion forcommunicating with a reader/writer device. These functions in the dataprocessing device 221 are connected through a bus.

A data processing device 231 possessed by the client includes at least acentral processing unit 232, a transmitting/receiving portion 233provided with a function of transmitting/receiving data, and a database234. The database 234 is provided with a memory area. In addition, thedata processing device 231 may also include an R/W interface portion forcommunicating with a reader/writer device. These functions in the dataprocessing device 231 are connected through a bus.

These data processing devices can exchange data through a communicationnetwork. As the communication network, an internet system, telephonelines, public lines such as a mobile phone, or LAN (local area network)can be cited. As a communication method using the communication network,E-mail can be cited.

Although in this embodiment mode, description is made on the case ofusing a building material as a material; the present invention is notlimited to this. A system of the present invention can be applied to anybusiness mode as far as it generates such an effect as aforementioned.For example, also in the plant of food products made from a plurality ofingredients or in the plant of cars formed of a plurality of parts, thepresent invention can be applied.

Embodiment Mode 3

In this embodiment mode, description is made on a data managing methodamong processors and the system thereof.

As shown in FIG. 5, there is a mode of completing one building by aplurality of processors (A) to (D). For example, a processor (A) is asupplier who provides a wood material. A processor (B) is a processorwho divides the wood material. A processor (C) is a builder, and aprocessor (D) is a data manager. The processor (D) can obtain data froma chip when construction is completed.

When the processor (A) processes the wood material, the sheet 101 isattached. At this time, the switch memory address (s) is turned off.Accordingly, an ID (a) cannot be read while an ID (b) can be read.

The processor (B) receives the wood material to which the sheet 101 isattached and cut it into a predetermined shape. The ID (b) can be read;therefore, the processor (B) can check whether the wood material is theone which is delivered using an appropriate material or through anappropriate route or not.

When the processor (B) uses the other wood material instead of the woodmaterial to which the sheet 101 is attached, which means a fraud, theprocessor (D) can find out the fraud since the other wood material doesnot include the sheet 101. Further, if the processor (D) cannot find outthe fraud, the processor (C) can find out the fraud. The fraud can befound out by holding the reader/writer device over the sheet 101 toobtain data in the memory and examine consistency.

The processor (C) completes to construct a building by combining thedelivered wood material and the like. The ID (b) can be read; therefore,the processor (C) can check whether the wood material is the one whichis delivered through an appropriate route or not.

When the processor (C) uses the other wood material instead of the woodmaterial to which the sheet 101 is attached, which means a fraud, theprocessor (D) can find out the fraud since the other wood material doesnot include the sheet 101.

The processor (D) manages and checks data among the processors (A) to(C). Therefore, the processor (D) has the authority to use the ID (a)and the ID (b). That is to say, the processors (A) to (C) which aresquarely surrounded by a dotted line can use only the ID (b). The switchaddress (s) can control to impart such an authority. Accordingly,credibility can be improved in checking data by the processor (D).

Data obtained by the processors (A) to (C) are collectively referred toas circulating data. Such circulating data can be managed by storing ina server. Only the processor (D) has the authority to access thisserver. The authority to access this server can be managed in accordancewith data in the ID (a). In FIG. 5, a flow of the data in the ID. (a) isshown by a dashed double-dotted line. On the other hand, the processors(A) to (C) can only read the circulating data stored in the server.

The client can access the server. Thus, the data in ID (a) aredetermined. Therefore, when the data obtained by the processor (D) arestored in the server, the client can check the obtained datasequentially. In FIG. 5, a flow of the data is shown by a dashed dottedline.

The builder stores data on the construction in the server. Accordingly,the processor (D) accesses the server; thereby reading the data on theconstruction. Thus, the data in ID (a) are determined. In FIG. 5, a flowof the data on the construction is shown by a dotted line.

By such a system of the present invention, quality of a material forconstituting a building can be managed, which leads to prevent afraudulent material from being used. In particular, not only after thecompletion of the construction but in process of the construction, theclient can check a condition through the server. Therefore, even inprocess of the construction, a fraud can be found out and the problemcan be solved early, which leads to prevent the fraud from being carriedout.

Further, by the system of the present invention, even in the case of abuilding method via a plurality of processors, a material can be easilymanaged among the processors. This is because since each of theprocessors is provided with an authority to obtain data from the server,each of them is not necessary to manage and organize the data in-house.Moreover, this is because a data manager can manage a material inadvance in accordance with the data in the server.

Note that although in this embodiment mode, description is made on thecase of using a wood material as a material; the present invention isnot limited to this. A system of the present invention can be applied toany business mode as far as it generates such an effect asaforementioned. For example, also in the plant of food products madefrom a plurality of ingredients or in the plant of cars formed of aplurality of parts, the present invention can be applied.

Embodiment Mode 4

It is concerned that the sheet including a chip is peeled off or anothersheet is put instead of the sheet in process of manufacture orconstruction. In this embodiment mode, description is made on astructure for preventing a fraud such as re-covering the sheet.

As shown in FIG. 6, the sheet 101 including a plurality of wirelesschips 100 is attached to a surface of a material 310 with a barrierlayer 305 interposed therebetween. Note that over each surface of theplurality of wireless chips 100, a protective layer 302 is provided. Bythe barrier layer 305 and the protective layer 302, intrusion of animpurity or moisture and an impact from the external can be prevented.Therefore, each of the barrier layer 305 and the protective layer 302 ispreferably stacked layers of an insulating film formed of an inorganicmaterial containing nitrogen and an insulating film formed of an organicmaterial. Needless to say, each of the barrier layer 305 and theprotective layer 302 may also be a single layer of an insulating filmformed of an inorganic material or an organic material.

Subsequently, an adhesive layer 308 is provided under the barrier layer305. The adhesive layer 308 has a low-adhesive surface 306 and ahigh-adhesive surface 307. An adhesive bond or an adhesive ofpolyethylene series, polyvinyl acetate (PVA) series, or epoxy series canbe used for the high-adhesive surface 307. On the other hand, an acrylicadhesive bond or adhesive can be used as an example for the low-adhesivesurface 306. One of the adhesive bond and the adhesive can be selectedconsidering adhesiveness.

According to a cross sectional view shown in FIG. 6, the low-adhesivesurface 306 and the high-adhesive surface 307 are disposed alternately.The high-adhesive surface 307 is disposed under a center portion of thewireless chip 100 and the low-adhesive surface 306 under both ends ofthe wireless chip 100.

The wireless chip 100 attached in this manner is to be damaged becauseof a difference of adhesive intensity when the sheet 101 is to be peeledoff. In specific, only the low-adhesive surface 306 is to be peeled offwhile the high-adhesive surface 307 remains to attach to the material310. Accordingly, the wireless chip 100 may be divided at the boundaryof the low-adhesive surface 306 and the high-adhesive surface 307, anddamaged.

Thus, the sheet 101 is forcibly peeled off; thereby damaging thewireless chip 100. Accordingly, it can be prevented that the sheet 101is peeled off or another sheet is put instead of the sheet 101.

Embodiment Mode 5

In this embodiment mode, a structure of a wireless chip is described. Adevice using a semiconductor element, such as a wireless chip of thepresent invention can be referred to as a semiconductor device.

As shown in FIG. 7, a wireless chip 701 of the present inventionincludes an integrated circuit integrating an antenna. In specific, thewireless chip 701 includes a resonant circuit 702 formed of an antennaand a resonance capacitor, a power source circuit 703, a clockgenerating circuit 704, a demodulating circuit 705, a controllingcircuit 706, a memory device 707 provided with a write-once memory, anda modulating circuit 709. Needless to say, the wireless chip 701 is notlimited to have the aforementioned structure, and a central processingunit (so-called CPU), a congestion controlling circuit, or the like maybe included. Further, the memory device may include a memory elementsuch as a static memory (SRAM), a dynamic memory (DRAM), a ferroelectricmemory (FeRAM), or an EEPROM as well as the write-once memory.

In addition, the wireless chip 701 may include a wire for connecting anantenna instead of the antenna integrated with the integrated circuit.In this case, when the wireless chip 701 is used, an antenna which ismanufactured separately is connected to the wire.

Further, the wireless chip 701 may include a wire for connecting amemory device 707 instead of the memory device 707. In this case, whenthe wireless chip 701 is used, the memory device 707 which ismanufactured separately is connected to the wire.

The wireless chip 701 of the present invention receives a radio wavebeamed from a reader/writer device 710 in the resonant circuit 702;therefore, a power source potential is generated in the power sourcecircuit 703. Further, data are demodulated by the radio wave received inthe demodulating circuit 705. The data are transmitted by the modulatingcircuit 709. In this manner, the data can be transmitted/received bywireless communication between the wireless chip 701 and thereader/writer device 710.

The reader/writer device 710 is connected to a data processing device712 through a communication line 711. Accordingly, the data can betransmitted/received between the reader/writer device 710 and thewireless chip 701 under the control of the data processing device 712.As the data processing device 712, a computer is cited. Although thecommunication line 711 has a wired mode, the data may be exchanged bywireless communication such as infrared communication.

The resonant circuit 702 receives a radio wave beamed from thereader/writer device 710; therefore, an alternating signal can begenerated at both ends of the antenna. The alternating signal can bepower of the wireless chip 701, and include data such as an instructiontransmitted from the reader/writer device 710. In the power sourcecircuit 703, the alternating signal generated in the resonant circuit702 is rectified with a diode and smoothed using capacitance; therebygenerating a power source potential and supplying it to each circuit.The clock generating circuit 704 generates clock signals having variousfrequency in accordance with the alternating signal generated in theresonant circuit 702. The demodulating circuit 705 demodulates dataincluded in the alternating signal generated in the resonant circuit702.

The controlling circuit 706 can sample an instruction from thedemodulated signal, transmit the instruction to write in the memorydevice 707, and store data which are stored in a register in apredetermined memory area within the memory device 707. Needless to say,data may be stored without having the register mediated. A signaldecoded by a decoding circuit within the controlling circuit 706 isgenerated so as to be outputted to the modulating circuit 709. Themodulating circuit 709 has a function to modulate a carrier wave inaccordance with the decoded signal.

The memory device 707 is provided with a write-once memory, or the like.The stored data can be written to the memory device 707. Further, thewritten data can be read.

Although in this embodiment mode, description is made on an example inwhich power is supplied to the wireless chip 701 from the reader/writerdevice 710, the present invention is not limited to this mode. Forexample, the wireless chip 701 can include a battery or the likeinternally so as to supply power, and data can be onlytransmitted/received wirelessly between the wireless chip 701 and thereader/ writer device 710. Since the wireless chip 701 mounted on abuilding has no restraint in thickness, the battery or the like can beincluded within the wireless chip 701.

Note that this embodiment mode can be implemented by freely combiningwith any of the aforementioned embodiment modes.

Embodiment Mode 6

In this embodiment mode, description is made on a mode of the memorydevice 707 included in the wireless chip 701 and an operating methodthereof.

As shown in FIG. 8, the memory device 707 includes a memory cell array756 in which a memory element is formed and a driver circuit. The drivercircuit includes a column decoder 751, a row decoder 752, a readingcircuit 754, a writing circuit 755, and a selector 753.

The memory cell array 756 has a memory cell 757 at each intersection ofa bit line Bm (m=1 to x) and a word line Wn (n=1 to y). Note that thememory cell 757 may be either an active memory cell to which atransistor is connected or a passive memory cell formed of only apassive element. Further, the bit line Bm is controlled by the selector753 while the word line Wn is controlled by the row decoder 752.

The column decoder 751 receives an address signal for specifying anarbitrary bit line and transmits the signal to the selector 753. Theselector 753 selects a specified bit line after receiving a signal ofthe column decoder 751. The row decoder 752 selects a specified wordline after receiving an address signal for specifying an arbitrary wordline. As a result of the aforementioned operation, one memory cell 757corresponding to the address signals is selected. The reading circuit754 reads and outputs data included in the selected memory cell 757. Thewriting circuit 755 generates a voltage required for writing, andapplies the voltage to the selected memory cell 757; thereby writing thedata.

Subsequently, a circuit configuration of the memory cell 757 isdescribed. In this embodiment mode, description is made on the circuitconfiguration of the memory cell 757 including a memory element 783 inwhich a memory material layer is interposed between an under sideelectrode and an upper side electrode.

The memory cell 757 shown in FIG. 9A is an active memory cell includinga transistor 781 and the memory element 783. A thin film transistor canbe used for the transistor 781. A gate electrode of the transistor 781is connected to the word line Wy. Further, one of a source electrode anda drain electrode of the transistor 781 is connected to the bit line Bxwhile the other is connected to the memory element 783. The under sideelectrode of the memory element 783 is connected to one of the sourceelectrode and the drain electrode of the transistor 781. The upper sideelectrode (corresponds to a reference numeral 782) of the memory element783 can be shared in each memory element 783 as a common electrode. Theupper side electrode 782 can be connected to ground.

Alternatively, as shown in FIG. 9B, a structure may be employed in whichthe memory element 783 is connected to a diode 784. As the diode 784, atransistor in which one of a source electrode and a drain electrode anda gate electrode are connected to each other (so-called diode-connected)can be used. Instead, as the diode 784, a Schottky diode formed by acontact of a memory material layer and an under side electrode can beused, or a diode formed by stacking layers of the memory material can beutilized.

As the memory material layer, a material which is changed in theproperty or condition thereof by an electric action, an optical action,or a thermal action can be used. For example, a material which can makean under side electrode and an upper side electrode short-circuited bythe change in the property or condition thereof due to melting by Jouleheat, dielectric breakdown, or the like can be used. Therefore, thememory material layer may have a thickness of from 5 nm to 100 nm,preferably, from 10 nm to 60 nm. The memory material layer can be madeof an inorganic material or an organic material, and can be formed by avapor deposition method, a spin coating method, a droplet dischargemethod, or the like.

As the inorganic material, silicon oxide, silicon nitride, siliconoxynitride, or the like can be used. Also by using such an inorganicmaterial, dielectric breakdown can be generated by controlling thethickness thereof and the under side electrode and the upper sideelectrode can be short-circuited.

As the organic material, for example, a compound of aromatic amineseries (that is, a bond of benzene ring—nitrogen is included), such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (abbreviated to α-NPD),4,4′-bis[N-(3-methylphenyl)-N-phenylamino]-biphenyl (abbreviated toTPD), 4,4′,4″-tris(N,N-diphenylamino)-triphenylamine (abbreviated toTDATA), 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]-triphenylamine(abbreviated to MTDATA), or4,4′-bis(N-(4-(N,N-di-m-tolylamino)phenyl)-N-phenylamino) biphenyl(abbreviated to DNTPD); polyvinyl carbazole (PVK); a phthalocyaninecompound such as phthalocyanine (abbreviated to H₂Pc), copperphthalocyanine (abbreviated to CuPc), or vanadyl phthalocyanine(abbreviated to VOPc); or the like can be used. These materials aresubstances having a high hole transporting property.

Further, as the organic material, for example, a material made of ametal complex or the like having a quinoline skeleton or abenzoquinoline skeleton, such as tris(8-quinolinolato) aluminum(abbreviated to Alq₃), tris(4-methyl-8-quinolinolato) aluminum(abbreviated to Almq₃), bis(10-hydroxybenzo[h]-quinolinato) beryllium(abbreviated to BeBq₂), orbis(2-methyl-8-quinolinolato)-4-phenylphenolato-aluminum (abbreviated toBAlq) or a material such as a metal complex having a ligand of oxazoleseries or thiazole series, such asbis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviated to Zn(BOX)₂) orbis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbreviated to Zn(BTZ)₂)can be used. These materials are substances having a high electrontransporting property.

Furthermore, in addition to a metal complex, a compound or the like suchas 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviatedto PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene(abbreviated to OXD-7),3-(4-tert-butylphenyl)-4-phenyl-5-(4-biphenylyl)-1,2,4-triazole(abbreviated to TAZ),3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole(abbreviated to p-EtTAZ), bathophenanthroline (abbreviated to BPhen), orbathocuproin (abbreviated to BCP) can be used.

The memory material layer may be formed of a single layer or stackedlayers. In case of stacked layers, stacked layers can be formed byselecting from the above materials. The above organic material and alight-emitting material may be stacked. As a light-emitting material,4-dicyanomethylene-2-methyl-6-[2-(1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]-4H-pyran(abbreviated to DCJT),4-dicyanomethylene-2-t-butyl-6-[2-(1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]-4H-pyran,periflanthene,2,5-dicyano-1,4-bis[2-(10-methoxy-1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]benzene,N,N′-dimethylquinacridone (abbreviated to DMQd), coumarin 6, coumarin545T, tris(8-quinolinolato) aluminum (abbreviated to Alq₃),9,9′-bianthlyl, 9,10-diphenylanthracene (abbreviated to DPA),9,10-bis(2-naphthyl) anthracene (abbreviated to DNA),2,5,8,11-tetra-t-buthylperylene (abbreviated to TBP), and the like aregiven.

A layer in which the above light-emitting material is dispersed may beused. In the layer in which the above light-emitting material isdispersed, an anthracene derivative such as9,10-di(2-naphthyl)-2-tert-butylanthracene (abbreviated to t-BuDNA); acarbazole derivative such as 4,4′-bis(N-carbazolyl) biphenyl(abbreviated to CBP); a metal complex such asbis[2-(2-hydroxyphenyl)pyridinato]zinc (abbreviated to Znpp₂) orbis[2-(2-hydroxyphenyl)benzoxazolate]zinc (abbreviated to ZnBOX); or thelike can be used as a host material. In addition, tris(8-quinolinolato)aluminum (abbreviated to Alq₃), 9,10-bis(2-naphthyl) anthracene(abbreviated to DNA),bis(2-methyl-8-quinolinolato)-4-phenylphenolate-aluminum (abbreviated toBAlq), or the like can be used.

The organic material preferably has a high glass transition temperature(Tg) of from 50° C. to 300° C., preferably from 80° C. to 120° C., sothat the property of the organic material changed by a thermal effect orthe like.

In addition, a material in which metal oxide is mixed with an organicmaterial or a light-emitting material may be used. Note that thematerial in which metal oxide is mixed includes a state in which metaloxide is mixed with the above organic material or the abovelight-emitting material, or a state in which metal oxide and the aboveorganic material or the above light-emitting material are stacked.Specifically, it indicates a state which is formed by a co-evaporationmethod using multiple evaporation sources. Such a material in whichmetal oxide is mixed with an organic material or a light-emittingmaterial can be referred to as an organic-inorganic composite material.

For example, in the case of mixing a substance having a high holetransporting property with metal oxide, it is preferable to use vanadiumoxide, molybdenum oxide, niobium oxide, rhenium oxide, tungsten oxide,ruthenium oxide, titanium oxide, chromium oxide, zirconium oxide,hafnium oxide, and tantalum oxide as the metal oxide.

In the case of mixing a substance having a high electron transportingproperty with metal oxide, lithium oxide, calcium oxide, sodium oxide,kalium oxide, or magnesium oxide is preferably used as the metal oxide.

A material which is changed in its property by an optical effect, anelectric effect, or a thermal effect can be used for the memory materiallayer; therefore, for example, a conjugated polymer doped with acompound (photoacid generator) generating acid by means for absorbinglight can also be used. Here, as the conjugated polymer, polyacetylenes,polyphenylene vinylenes, polythiophenes, poly anilines, polyphenyleneethinylenes, or the like can be used. As the photoacid generator, arylsulfonium salt, aryl iodonium salt, o-nitrobenzyl tosylate, arylsulfonic acid p-nitrobenzyl ester, sulfonyl acetophenones, Fe-arenecomplex PF₆ salt, or the like can be used.

Next, an operation at the time of writing data in the active type memorycell 757 shown in FIG. 9A is described. In this embodiment mode, alogical value which is stored in a memory element at an initial state isdenoted by “0” and a logical value which is stored in a memory elementin which the characteristics thereof is changed by an electric effect orthe like is denoted by “1”. The memory element at an initial state hashigh resistance while the memory element in which an upper sideelectrode and an under side electrode are short-circuited has lowresistance.

In the case where writing is carried out, a bit line Bm in an m-thcolumn and a word line Wn in an n-th row are selected by the columndecoder 751, the row decoder 752, and the selector 753; thereby turningon the transistor 781 included in the memory cell 757 in the m-th columnand the n-th row.

Subsequently, a predetermined voltage is applied to the bit line Bm inthe m-th column by the writing circuit 755 in a predetermined period. Avoltage and time for the application is determined according to arequirement that a state of the memory element 783 is changed from aninitial state to a short-circuited state with low resistance. Thevoltage applied to the bit line Bm in the m-th column is transmitted tothe under side electrode of the memory element 783, which results inpotential difference between the under side electrode and the upper sideelectrode. Then, a current flows to the memory element 783, a state ofthe memory material layer is changed, and characteristics of the memoryelement 783 are changed. Accordingly, a value stored in the memoryelement 783 is changed from the logical value “0” to the logical value“1”.

Such a writing operation is carried out in accordance with thecontrolling circuit 706.

Next, an operation of reading data is described. As shown in FIG. 10,the reading circuit 754 has a resistance element 790 and a senseamplifier 791. Data are read by applying a voltage between the underside electrode and the upper side electrode to determine the memoryelement 783 is at either an initial state or a short-circuited state. Inspecific, data can be read by a resistance dividing method.

For example, description is made on a case of reading data in the memoryelement 783 in the m-th column and the n-th row from a plurality of thememory cells 757.

First, the bit line Bm in the m-th column and the word line Wn in then-th row are selected by the column decoder 751, the row decoder 752,and the selector 753. At this time, an address signal to select aspecific bit line and word line is inputted to the column decoder 751.Thus, the transistor 781 included in the memory cell 757 arranged in them-th column and the n-th row is turned on; therefore, the memory element783 and the resistance element 790 are connected in series. Accordingly,a potential at a point P shown in FIG. 10 is determined in accordancewith current characteristics of the memory element 783. Electriccharacteristics of the memory element 783 are resulted from thatresistance of the memory element 783 in the initial state is differentfrom that in the short-circuited state.

For example, the potential at the point P is referred to as V1 in thecase where the memory element 783 is at the initial state, and thepotential at the point P is referred to as V2 in the case where thememory element 783 is at the short-circuited state with low resistance.By applying a reference potential Vref which satisfies V1>Vref>V2, datastored in the memory element 783 can be read. In specific, in the casewhere the memory element 783 is at the initial state, an outputpotential of the sense amplifier 791 becomes Lo. On the other hand, inthe case where the memory element 783 is at the low-resistance state, anoutput potential of the sense amplifier 791 becomes Hi.

According to the aforementioned method, the data in the memory element783 are read with a voltage value by using resistance division and adifference in a resistance value of the memory element 783.Alternatively, the data in the memory element 783 may be read with acurrent value. Note that the reading circuit 754 of the presentinvention is not limited to the aforementioned configuration. Anyconfiguration may be used for the reading circuit 754 as far as the datain the memory element 783 can be read.

The memory element 783 having such a configuration changes a state froma logical value “0” to a logical value “1”. The change from a logicalvalue “0” to a logical value “1” is irreversible; therefore, the memoryelement becomes a write-once memory, that is, a memory element in whichrewriting cannot be conducted.

Data can be thus written to the memory element 783. The written data canbe read by wireless communication.

In this way, data on a building can be sequentially stored in a memorydevice, and the stored data can be read by a reader/writer device.

Note that this embodiment mode can be implemented by freely combiningany of the aforementioned embodiment modes.

Embodiment Mode 7

In this embodiment mode, description is made on a cross-sectional viewof the memory device 707.

FIG. 11A shows a cross sectional view of a memory device in which amemory cell portion 301 and a control circuit portion 322 are formedover an insulating substrate 323. As the insulating substrate 323, asubstrate such as a glass substrate, a quartz substrate, or a substratemade of silicon or a metal substrate can be used.

A base film 311 is formed over the insulating substrate 323. In thedriver circuit portion 322, thin film transistors 320 and 321 areprovided. In the memory cell portion 301, a thin film transistor 621 isprovided with the base film 311 interposed therebetween. Each thin filmtransistor has a semiconductor film 312 patterned in an island shape, agate electrode 314 provided with the gate insulating film interposedtherebetween, and an insulator (so-called sidewall) 313 provided on aside face of the gate electrode 314. The semiconductor film 312 isformed so as to have a film thickness of 0.2 μm or less, typically, from40 nm to 170 nm, preferably, from 50 nm to 150 nm.

Further, each thin film transistor has the sidewall 313, an insulatingfilm 316 for covering the semiconductor film 312, and an electrode 315which is connected to an impurity region formed in the semiconductorfilm 312. Note that the electrode 315 can be formed to connect to theimpurity region by forming a contact hole in the gate insulating filmand the insulating film 316, forming a conductive film in the contacthole, and patterning the conductive film.

Insulating films 317 and 318 each of which functions as an interlayerinsulating film are preferably provided to enhance flatness. Theinsulating film 317 is preferably made of an organic material, and theinsulating film 318 is preferably made of an inorganic material. This isbecause the insulating film 318 prevents moisture from entering into theinsulating film 317. In the case where the insulating films 317 and 318are provided, the electrode 315 can be formed so as to connect to theimpurity region through the contact hole formed in the insulating films317 and 318 as well as in the gate insulating film and the insulatingfilm 316.

In addition, an insulating film 325 is formed, and an under sideelectrode 327 of a memory element is provided so as to connect to theelectrode 315. At this time, the under side electrode 327 may beprovided directly over the electrode 315; however, in this embodimentmode, the insulating film 325 is provided, and the electrode 315 and theunder side electrode 327 are connected through an opening portion in theinsulating film 325. It is preferable that flatness of a surface to beformed of the under side electrode 327 can be enhanced by the insulatingfilm 325.

An insulating film 328, in which an opening portion is provided so as toexpose the under side electrode 327, is formed to cover an end portionof the under side electrode 327.

In the opening portion, a memory material layer 329 and an upper sideelectrode 330 are formed in this order. Thus, the memory element 783including the under side electrode 327, the memory material layer 329,and the upper side electrode 330 is formed. The memory material layer329 can be made of an organic material or an inorganic material asdescribed in the above embodiment mode. The under side electrode 327 orthe upper side electrode 330 can be made of a conductive material, forexample, a film made of an element of aluminum (Al), titanium (Ti),molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film or thelike using these elements. Further, indium tin oxide (ITO), indium tinoxide containing silicon oxide, or a light transmissive material such asindium oxide containing 2 to 20 wt % of zinc oxide can be used.

Thereafter, an insulating film 331 is formed to seal. The insulatingfilm 331 can also enhance flatness further and prevent the intrusion ofan impurity element.

As each insulating film described in this embodiment mode, an inorganicmaterial or an organic material can be used. Silicon oxide or siliconnitride can be used for the inorganic material. As the organic material,polyimide, acrylic, polyamide, polyimide amide, resist,benzocyclobutene, siloxane, or polysilazane can be used. Note that asiloxane resin corresponds to a resin including a Si—O—Si bond. Askeleton structure of siloxane is formed by the bond of silicon (Si) andoxygen (O). As a substituent included in siloxane, an organic groupcontaining at least hydrogen (for example, alkyl group or aromatichydrocarbon) is used. Alternatively, a fluoro group may be used as thesubstituent. Further alternatively, a fluoro group and an organic groupcontaining at least hydrogen may be used as the substituent.Polysilazane is formed by using a polymer material having a bond ofsilicon (Si) and nitrogen (N) as a starting material. Note that theorganic material is preferably used to enhance flatness while theinorganic material is preferably used to prevent the intrusion of animpurity element.

FIG. 11B different from FIG. 11A shows a cross sectional view of onlythe memory cell portion 301 in which a memory material layer is formedin a contact hall 351 of the electrode 315. Similarly to FIG. 11A, theelectrode 315 is used as an under side electrode, and the memorymaterial layer 329 and the upper side electrode 330 are formed over theelectrode 315; thereby forming a memory element 622. FIG. 11B shows amode in which the insulating films 325 and 328 are omitted. Thestructure of other parts is similar to FIG. 11A; therefore, the similarparts are denoted by the same reference numerals in FIG. 11A andexplanation thereof is omitted.

By forming the memory element 622 in the contact hole 351 as shown inFIG. 11B, reduction in size of a memory device can be achieved. Further,since the electrode 315 also functions as an under side electrode, anelectrode for a memory is not required. Accordingly, a memory device oflow cost by reducing a manufacturing process can be provided.

Thus, the memory device which can be applied to a building materialmanaging system of the present invention is formed over an insulatingsubstrate and has a driver circuit integrated in the memory device;therefore, a manufacturing cost of the memory device can be reduced.

Note that this embodiment mode can be implemented by freely combiningwith any of the above-mentioned embodiment modes.

This application is in accordance with Japanese Patent Applicationserial no. 2005-121686 filed in Japan Patent Office on 19 Apr. 2005, theentire contents of which are hereby incorporated by reference.

1. A material management method comprising the step of: attaching asheet including a plurality of memories to each surface of a pluralityof materials; dividing each of the plurality of materials with the sheetin accordance with data in the memory; constructing a building by usingthe plurality of materials which are divided in accordance with the datain the memory; and checking the data on the constructed building, whichis stored in the plurality of memories.
 2. A material management methodcomprising the step of: attaching a sheet including a plurality ofwrite-once memories each storing data of the material to each surface ofa plurality of materials; dividing each of the plurality of materialswith the sheet in accordance with the data in the memory; writing dataon the division in the write-once memory; constructing a building byusing the plurality of material which are divided; writing data on theconstruction in the write-once memory; and checking the data on theconstructed building, which is stored in the plurality of write-oncememories.
 3. A material management method comprising the step of:attaching a sheet including a plurality of memories to each surface of aplurality of the materials; wherein data on a material are stored in theplurality of memories and a log preventing a writing are each set in theplurality of memories; dividing each of the plurality of materials withthe sheet in accordance with data in the memory; constructing a buildingby using the plurality of material which are divided in accordance withthe data in the memory; checking the data on the building, which isstored in the memory; canceling the log of the memory; and writing adata in the memory.
 4. A material management method comprising the stepof: attaching a sheet including a plurality of memories each storingdata of a material to each surface of a plurality of the materials by afirst processor; reading the data in the memory and dividing each of theplurality of materials with the sheet in accordance with the data by asecond processor; reading the data in the memory and constructing abuilding by using the plurality of material which are divided inaccordance with the data by a third processor; and checking the data onthe building, which is stored in the memory and providing the data to aclient by a fourth processor.
 5. A material management method comprisingthe step of: attaching a sheet including a plurality of write-oncememories each storing data of a material to each surface of a pluralityof the materials by a first processor; reading the data in thewrite-once memory, dividing each of the plurality of materials with thesheet, and storing data on the ting by a second processor; reading thedata in the write-once memory, constructing a building by using theplurality of material which are divided, and storing data on theconstruction by a third processor; and checking the data on thebuilding, which is stored in the write-once memory and providing thedata to a client by a fourth processor.
 6. A material management methodcomprising the step of: attaching a sheet including a plurality ofmemories to each surface of a plurality of the materials by a firstprocessor; wherein data on a material are stored in the plurality ofmemories and a log preventing a writing are each set in the plurality ofmemories; dividing each of the plurality of materials with the sheet inaccordance with read data in the memory by a second processor;constructing a building by using the plurality of material which aredivided in accordance with read data in the memory by a third processor;and checking the data on the constructed building, which is stored inthe memory, canceling the log of the memory, writing a data in thememory, and providing the data to a client by a fourth processor.
 7. Thematerial management method according to claim 1, wherein the data isstored in a server through a reader/writer device.
 8. The materialmanagement method according to claim 2, wherein the data is stored in aserver through a reader/writer device.
 9. The material management methodaccording to claim 3, wherein the data is stored in a server through areader/writer device.
 10. The material management method according toclaim 4, wherein the data is stored in a server through a reader/writerdevice.
 11. The material management method according to claim 5, whereinthe data is stored in a server through a reader/writer device.
 12. Thematerial management method according to claim 6, wherein the data isstored in a server through a reader/writer device.
 13. The materialmanagement method according to claim 10, wherein the stored data isprovided to the client and first to fourth processors through a bus. 14.The material management method according to claim 11, wherein the storeddata is provided to the client and first to fourth processors through abus.
 15. The material management method according to claim 12, whereinthe stored data is provided to the client and first to fourth processorsthrough a bus.
 16. The material management method according to claim 1,wherein the plurality of memories are protected from the data erasing.17. The material management method according to claim 2, wherein theplurality of memories are protected from the data erasing.
 18. Thematerial management method according to claim 3, wherein the pluralityof memories are protected from the data erasing.
 19. The materialmanagement method according to claim 4, wherein the plurality ofmemories are protected from the data erasing.
 20. The materialmanagement method according to claim 5, wherein the plurality ofmemories are protected from the data erasing.
 21. The materialmanagement method according to claim 6, wherein the plurality ofmemories are protected from the data erasing.
 22. The materialmanagement method according to claim 1, wherein the plurality ofmaterials are wood materials.
 23. The material management methodaccording to claim 2, wherein the plurality of materials are woodmaterials.
 24. The material management method according to claim 3,wherein the plurality of materials are wood materials.
 25. The materialmanagement method according to claim 4, wherein the plurality ofmaterials are wood materials.
 26. The material management methodaccording to claim 5, wherein the plurality of materials are woodmaterials.
 27. The material management method according to claim 6,wherein the plurality of materials are wood materials.
 28. The materialmanagement method according to claim 2, wherein the step of dividingeach of the plurality of materials is conducted after the step ofwriting data on the division.
 29. The material management methodaccording to claim 2, wherein the step of dividing each of the pluralityof materials is conducted before the step of writing data on thedivision.
 30. The material management method according to claim 2,wherein the step of constructing the building is conducted after thestep of writing data on the construction.
 31. The material managementmethod according to claim 2, wherein the step of constructing thebuilding is conducted before the step of writing data on theconstruction.
 32. A wireless chip comprising: an adhesive layer having afirst portion and a second portion over a material; a barrier layer overthe adhesive layer; a sheet including a plurality of wireless chipsattached to the material via the adhesive layer and the barrier layer;an integrated circuit portion storing data on the material; and anantenna for supplying power to the integrated circuit portion, whereinthe first portion overlaps the wireless chip; and wherein adhesiveintensity of the first portion is higher than that of the secondportion.
 33. A wireless chip comprising: an adhesive layer having afirst portion and a second portion over a material; a barrier layer overthe adhesive layer; a sheet including a plurality of wireless chipsattached to the material via the adhesive layer and the barrier layer;an integrated circuit portion storing data on the material; and anantenna for supplying power to the integrated circuit portion, whereinthe first portion overlaps the wireless chip; wherein an edge of thesecond portion overlaps the wireless chip; wherein adhesive intensity ofthe first portion is higher than that of the second portion.
 34. Thewireless chip according to claim 32, further comprising: a protectivelayer over the adhesive layer.
 35. The wireless chip according to claim33, further comprising: a protective layer over the adhesive layer. 36.The wireless chip according to claim 32, wherein the wireless chipincludes a plurality of memories.
 37. The wireless chip according toclaim 33, wherein the wireless chip includes a plurality of memories.